Book Editing
1. E. Zschech, C. Whelan, T. Mikolajick (Eds.)
“Materials for Information Technology – Devices, Interconnects and Packaging”
(508 p.)
Springer London (2005)
2. M. Baklanov, P. S. Ho, E. Zschech (Eds.)
“Advanced Interconnects for ULSI Technology”
(579 p.)
John Wiley & Sons, Chichester (2012)
Conference Proceedings Editing
1. E. Zschech, K. Maex, P. S. Ho, H. Kawasaki, T. Nakamura
“Stress-Induced Phenomena in Metallization”
(372 p.)
AIP Conf. Proc. 817, Melville, New York (2006)
2. S. Ogawa, P. S. Ho, E. Zschech
“Stress-Induced Phenomena in Metallization”
(204 p.)
AIP Conf. Proc. 945, Melville, New York (2007)
3. P. S. Ho, E. Zschech, S. Ogawa,
“Stress-Induced Phenomena in Metallization”
AIP Conf. Proc., Melville, New York (2009)
4. E. Zschech, P. S. Ho, S. Ogawa
“Stress-Induced Phenomena in Metallization”
(257 p.)
AIP Conf. Proc. 1300, Melville, New York (2010)
5. E. Zschech, R. Radojcic, V. Sukharev, L. Smith
“Stress Management for 3D ICs using Through Silicon Vias”
(173 p.)
AIP Conf. Proc. 1378, Melville, New York (2011)
6. P. S. Ho, C. K. Hu, M. Nakamoto, S. Ogawa, V. Sukharev, L. Smith, E. Zschech
“Stress-Induced Phenomena and Reliability in 3D Microelectronics”
AIP Conf. Proc. 1601, Melville, New York (2014)
Journal Editing
1. G. Petzow, F. Mücklich, E. Zschech (Guest Editor)
„Focused Ion Beams for TEM Sample Preparation“
Praktische Metallographie 40 (2003) 4
2. G. Petzow, F. Mücklich, E. Zschech (Guest Editor)
„Focused Ion Beams for TEM Sample Preparation“
Praktische Metallographie 41 (2004) 4
3. G. Petzow, F. Mücklich, E. Zschech (Guest Editor)
„Focused Ion Beams for TEM Sample Preparation“
Praktische Metallographie 42 (2005) 4
4. S. Mhaisalkar, Y. C. Yeo, N. Balasubramania, T. M. Lu, E. Zschech (Guest Editors)
„Materials for Advanced Technologies – Silicon Microelectronics: Processing to Packaging”
Thin Solid Films 504 (2006) 1 – 2
5. K. Maruszewski, E. Zschech (Guest Editors)
„Synthesis and Analysis of Nanomaterials and Nanostructures“
Mat. Sci. Poland 25 (2007) 1
6. S. E. Schulz, H. Koerner, E. Zschech (Guest Editors)
„Materials for Advanced Metallization“
Microelectronic Engineering 85 (2008) 10
7. E. Zschech, B. Michel (Guest Editors)
“Materials for Information Technology”
Advanced Engineering Materials 11 (2009) 4
8. P. S. Ho, E. Zschech, L. Smith, H. M. Tong (Guest Editors)
“Materials, Processing and Reliability of 3D Interconnects”
IEEE Transaction of Device, Materials and Reliability 12 (2012) 2
9. E. Zschech (Guest Editor)
“Nanoanalysis”
Advanced Engineering Materials 16 (2014) 5
10. P. S. Ho, E. Zschech (Guest Editors)
“Stress Induced Phenomena in Metallizations”
IEEE Transaction of Device, Materials and Reliability 16 (2016) 4
Book (Monography)
1. E. Zschech
“Bondkontakte. Metallphysikalische Prozesse in mikroelektronischen Drahtbondkontakten integrierter Schaltkreise”
(192 S.)
Akademie-Verlag Berlin (1990)
Book Chapters
1. E. Zschech, W. Blau
“EXAFS Investigation of Micro-Phase Decomposition in Metal-Metalloid Glasses”, in “Amorphous Structures – Methods and Results” (Ed. D. Schulze)
Akademie-Verlag Berlin, pp. 179-193 (1990)
2. E. Zschech
“Verbindungstechniken für elektronische Baugruppen – Grundlagen der Verbindungsbildung”
pp. 153-174
in “Baugruppentechnologie der Elektronik – Montage” (Ed. W. Scheel)
Verlag Technik, Berlin (1. Auflage 1997, 2. Auflage 1999)
and
in „Electronics Assembly Technology“
Electrochemical Publ., Port Erin (1. Auflage 2003, 2. Auflage 2004)
3. E. Zschech
“Technische Zuverlässigkeit von stoffschlüssigen Verbindungen – Werkstoffphysikalische Prozesse”
pp. 667-743
in “Baugruppentechnologie der Elektronik – Montage” (Ed. W. Scheel)
Verlag Technik, Berlin (1. Auflage 1997, 2. Auflage 1999)
and
in „Electronics Assembly Technology“
Electrochemical Publ., Port Erin (1. Auflage 2003, 2. Auflage 2004)
4. R. Spolenak, E. Zschech
„Interconnects for Microelectronics“
in „Metal Based Thin Films for Electronics“ (Eds. K. Wetzig, C. M. Schneider)
Wiley-VCH, Berlin, pp. 7-24
(1. Auflage 2003, 2. Auflage 2005)
5. E. Zschech
„Barrier and Nucleation Layers for Interconnects“
in „Metal Based Thin Films for Electronics“ (Eds. K. Wetzig, C. M. Schneider)
Wiley-VCH, Berlin, pp. 222-234
(1. Auflage 2003, 2. Auflage 2005)
6. E. Zschech
„Device Related Aspects for Si-Based Electronics“
in „Metal Based Thin Films for Electronics“ (Eds. K. Wetzig, C. M. Schneider)
Wiley-VCH, Berlin, pp. 317-321
(1. Auflage 2003, 2. Auflage 2005)
7. H. Stegmann, H. J. Engelmann, E. Zschech
„Transmission Electron Microscopy in Semiconductor Manufacturing“
in „Science, Technology and Education of Microscopy: An Overview“ (Ed. A. Mendez-Vilas)
Formatex Press, Badjoz, pp. 187-199 (2003)
8. I. Zienert, H. Prinz, H. Geisler, E. Zschech
„Texture and Stress Study of Sub-Micron Copper Interconnect Lines using X-Ray Micro Diffraction“
in “Materials for Information Technology – Devices, Interconnects and Packaging” (Eds. E. Zschech, C. Whelan, T. Mikolajick)
Springer London, pp. 241–250 (2005)
9. M. Hecker, R. Huebner, J. Acker, V. Hoffmann, N. Mattern, R. Ecke, S. E. Schulz, H. Heuer, C. Wenzel, H. J. Engelmann, E. Zschech
„Advanced Barriers for Copper Interconnects“
in “Materials for Information Technology – Devices, Interconnects and Packaging” (Eds. E. Zschech, C. Whelan, T. Mikolajick)
Springer London, pp. 283–296 (2005)
10. M. A. Meyer, I. Zienert, E. Zschech
„Electron Backscatter Diffraction: Application to Cu Interconnects in Top-View and Cross-Section“
in “Materials for Information Technology – Devices, Interconnects and Packaging” (Eds. E. Zschech, C. Whelan, T. Mikolajick)
Springer London, pp. 485–496 (2005)
11. J. U. Knickerbocker, L. W. Kong, S. Niese, A. Diebold, E. Zschech
„3D Interconnect Technology“
in “Advanced Interconnects for ULSI Technology”
(Eds. M. Baklanov, P. S. Ho, E. Zschech)
John Wiley & Sons Chichester, pp. 437-502 (2012)
Publications in Peer-Reviewed Journals
1. E. Zschech, G. Merz, W. Blau, K. Kleinstück
“A Simple Method for Determining the Radius of Curvature of Bent Spectrometer Crystals”
Cryst. Techn. 15, K25-K27 (1980)
2. E. Zschech, W. Blau, B. Wehner, K. Kleinstück, M. Dick, E. Förster
“A Curved-Crystal Spectrometer for Soft X-Ray Emission Study of Metals and Metallic Alloys”
Cryst. Res. Technol. 19, 1007-1014 (1984)
3. E. Zschech, W. Blau, H. Vega, K. Kleinstück, S. Mager, M. A. Kozlov, M. A. Sheromov
“EXAFS and X-Ray Diffractional Investigation of the Heusler-Type Alloys Co2MnSi and Fe2.4Mn0.6Al. Determination of the Ordering Probabilities”
phys. stat. sol. (a) 86, 117-124 (1984)
4. W. Blau, H. Steil, E. Zschech
“Untersuchung der Sauerstoffkoordination von Zirconium im Grundglas einer MgO-Al2O3-SiO2-Glaskeramik mittels EXAFS”
Z. f. Chemie 25, 167-169 (1985)
5. E. Zschech, W. Blau, K. Kleinstück, H. Hermann, N. Mattern, M. A. Kozlov, M. A. Sheromov
“Heterogeneous Structure of the Quarternary Metallic Glass Fe40Ni40P14B6: An EXAFS Investigation”
J. Non-Cryst. Solids 86, 336-349 (1986)
6. R. Markendorf, E. Zschech, W. Blau, K. Kleinstück
“Chemical Shifts of EXAFS Backscattering Phases within the Framework of Neutral Pseudoatoms”
phys. stat. sol. (b) 134, K121-K124 (1986)
7. E. Zschech, W. Blau
“Metallphysikalische Strukturuntersuchungen mittels EXAFS-Spektroskopie”
Neue Hütte 32, 148-153 (1987)
8. W. Blau, E. Zschech, J. Bergmann
“EXAFS Investigation of Short-Range Order in Amorphous Solids”
Nucl. Instr. Meth. A 261, 166-172 (1987)
9. E. Zschech, W. Blau
“Structural Investigations in Metal Physics using EXAFS Spectroscopy”
Nucl. Instr. Meth. A 261, 178-180 (1987)
10. E. Zschech, V. Hietschold, K. Kleinstück, G. Auerswald, W. Blau
“EXAFS Investigation of Cu Containing Glasses”
Nucl. Instr. Meth. A 261, 181-184 (1987)
11. I. Geleji-Neubauer, E. Zschech
“Phase Formation in the Cu-Al Interface Studied by in-situ X-Ray Diffraction”
Z. f. Kristallographie 185, 175 (1988)
12. E. Zschech, A. Kaiser
“X-Ray Diffractional Investigation of the Copper-Aluminium Interface Reaction”,
in “Advanced Methods in X-Ray and Neutron Structure Analysis of Materials”
Plenum Press New York, pp. 249-252 (1988)
13. E. Zschech, W. Blau, V. K. Fjodorow, M. A. Sheromov
“EXAFS Investigation of Fe1-xBx Amorphous Alloys”
Nucl. Instr. Meth. A 282, 586-589 (1989)
14. E. Zschech, P. Rennert
“Phase Shifts in the EXAFS of Crystalline Iron – Experimental Results and Theoretical Calculations”
Nucl. Instr. Meth. A 282, 658-663 (1989)
15. F. Rudolf, Ch. Küttner, E. Zschech, K. H. Rudolph
“Der Verschleiß von Werkzeugen für das Ultraschallbonden in der Mikroelektronik. Werkstoffwissenschaftliche Aspekte” (Teil 1)
Schweißtechnik 40, 264-266 (1990)
16. F. Rudolf, Ch. Küttner, E. Zschech, K. H. Rudolph
“Der Verschleiß von Werkzeugen für das Ultraschallbonden in der Mikroelektronik. Werkstoffwissenschaftliche Aspekte” (Teil 2)
Schweißtechnik 40, 315-317 (1990)
17. E. Zschech, A. Kaiser, H. H. Daut, P. Fischer, W. Schneider, W. Kießling
“Komplexe Untersuchung atomarer Transportmechanismen und Effekte in Cu/Al-Drahtbondkontakten”
Z. Metallkunde 82, 146-150 (1991)
18. W. Kiessling, E. Zschech
“Intermetallic Compounds in Cu-Al Wire Bonding Contacts of Integrated Circuits Studied by AES”
Metall 45, 772-774 (1991)
19. E. Zschech, G. Auerswald, E. D. Klinkenberg, B. N. Novgorodov
“Short Range Order in Yttria Stabilized Zirconia: An EXAFS Study”
Nucl. Instr. Meth. A 308, 255-259 (1991)
20. H. Michaelis, E. Zschech, N. W. Thomas
“EXAFS-Analyse und Modellierung der atomaren Struktur in Y2O3-stabilisiertem ZrO2”
Z. f. Kristallographie Suppl. 3, 196 (1991)
21. W. Blau, E. Zschech
“Evaluation of EXAFS Data by a Bayesian LSE Method with General Constraints”
phys. stat. sol. (a) 129, 69-79 (1992)
22. E. Zschech, L. Tröger, D. Arvanitis, H. Michaelis, U. Grimm, K. Baberschke
“A Study of the Self-Absorption Effect in the Fluorescence Yield of NiO at the Oxygen K Edge”
Solid State Comm. 82, 1-5 (1992)
23. H. Bohmeier, H. H. Daut, E. Zschech
“Entwicklung von Werkstoffen für elektronische Anwendungen”
Metall 46, 341-345 (1992)
24. D. Vieweg, R. Krawietz, U. Lorz, E. Zschech
“Zusammenhang zwischen Herstellungsparametern, mechanischen Eigenschaften und Gefügekenngrößen von Al2O3-Keramik”
Metall 46, 453-457 (1992)
25. E. Zschech, B. Novgorodov, J. Zbiral, C. Jangg, H. J. Ullrich
“EXAFS Study of Mechanically Alloyed Ni-Ta Powder”
Microchimica Acta 107, 235-243 (1992)
26. B. Wachsmuth, E. Zschech, N. W. Thomas, S. J. Gurman
“EXAFS-Analyse der atomaren Struktur von Aurivillius-Verbindungen”
Z. f. Kristallographie Suppl. 5, 254 (1992)
27. L. Tröger, D. Arvanitis, K. Baberschke, H. Michaelis, U. Grimm, E. Zschech
“Full Correction of the Selfabsorption Effect in Fluorescence EXAFS of Bulk Samples in the Soft X-Ray Region”
Phys. Rev. B 46, 3283-3289 (1992)
28. E. Zschech, G. Binde, V. Klemm
“The Promise of EXAFS/EXELFS Spectroscopy for Structure Analysis in Ceramic Composites”
J. Europ. Ceram. Soc. 10, 213-230 (1992)
29. E. Zschech, P. N. Kountouros, G. Petzow, P. Behrens, A. Lessmann, R. Frahm
“Synchrotron Radiation Ti-K XANES Study of TiO2-Y2O3-Stabilized Zirconia Polycrystals”
J. Am. Cer. Soc. 76, 197-201 (1993)
30. B. Wachsmuth, E. Zschech, N. W. Thomas, S. G. Brodie, S. J. Gurman, S. Baker, S. C. Bayliss
“Structure Model of Aurivillius Compounds”
phys. stat. sol. (a) 135, 59-71 (1993)
31. E. Zschech, W. Blau
“Application of the Bayesian Estimation Method to the EXAFS Data Analysis”
Jpn. J. Appl. Phys. 32, Suppl. 32-2, 119-121 (1993)
32. L. Tröger, A. Arvanitis, J. J. Rehr, T. Lederer, T. Yokoyama, K. Baberschke, E. Zschech
“Improved Distance Determination in Oxygen EXAFS: Soft X-ray Fluorescence Measurements versus Theoretical Standards”
Jpn. J. Appl. Phys. 32, Suppl. 32-2, 137-139 (1993)
33. L. Tröger, E. Zschech, D. Arvanitis, K. Baberschke
“Quantitative Fluorescence EXAFS Analysis of Concentrated Samples – Correction of the Self-Absorption Effect”
Jpn. J. Appl. Phys. 32, Suppl. 32-2, 144-146 (1993)
34. E. Zschech
“Anwendungsmöglichkeiten der Synchrotronstrahlung in der Materialforschung”
Metall 47, 1119-1125 (1993)
35. K. Winkelmann, O. Göbel, A. P. Nikkilä, P. Vuorinen, T. Mäntylä, E. Zschech
“Influence of Sintering Aids on Sintering, Microstructure and Mechanical Properties of Al2O3 Ceramics”
Metall 48, 382-387 (1994)
36. O. Göbel, K. Winkelmann, E. Zschech
“An Alternative Method of Introducing Sintering Aids into Al2O3 Ceramics”
Ceramic Forum International 71, 483-484 (1994)
37. E. Zschech, G. Neye, H. Berek
“Metallkundliche Untersuchungen an TIG- und LB-geschweißten AlMgSiCu-Strangpreßprofilen”
Aluminium 71, 220-224 (1995)
38. F. Neissendorfer, S. J. Gurman, E. Zschech, W. Pfeiler
“Short-Range Order in AgAl Alloys Studied by EXAFS Spectroscopy”
Physica B 208 & 209, 625-626 (1995)
39. L. A. Guitterez, G. Neye, E. Zschech
“Microstructure, Hardness Profile and Tensile Strength in Welds of 6013T6 Extrusions”
Welding Journal 75, 115s-121s (1996)
40. E. Zschech
“Metallkundliche Prozesse bei der Wärmebehandlung aushärtbarer Aluminiumlegierungen”
Härterei-Technische Mitteilungen 51, 137-144 (1996)
41. B. C. Meyer, E. Lectard, N. Serrano, E. Zschech, T. Hirsch, P. Mayr
„Laserstrahlschweißen der Al-Mg-Si-Cu-Legierung 6013“
Härterei-Technische Mitteilungen 52, 291-297 (1997)
42. E. Zschech
„Stickstoff in Aluminium und Titan – Metallkundliche Grundlagen“
Härterei-Technische Mitteilungen 53, 279-282 (1998)
43. K. Iltgen, E. Zschech, A. Ghatak-Roy, T. Hossain
„Future In-Fab Application of TXRF for Semiconductor Industry“
Spectrochimica Acta B 54, 1393-1398 (1999)
44. M. Hietschold, F. Müller, A. D. Müller, H. J. Engelmann, E. Zschech
„Investigation of Local Electrical Surface Characteristics by Dynamical Scanning Force Microscopy“
Fres. J. Anal. Chem. 365, 96-98 (1999)
45. T. E. M. Staab, E. Zschech, R. Krause-Rehberg
„Positron Lifetime Measurements for Characterization of Nano-Structural Changes in the Age Hardenable AlCuMg 2024 Alloy“
J. Mater. Sci. 35 (18), 4667-4672 (2000)
46. H. J. Engelmann, H. Saage, E. Zschech
„Application of Analytical TEM for Failure Analysis of Semiconductor Device Structures”
Microelectronics Reliability 40, 1747–1751 (2000)
47. N. Mattern, M. Hecker, D. Fischer, C. Wenzel, N. Schell, W. Matz, H. J. Engelmann, E. Zschech
„X-Ray Structure Characterization of Barriers for Copper Metallization“
Microelectronics Reliability 40, 1765–1770 (2000)
48. E. Zschech, R. Rauh
“Intelligenter Leichtbau: Aluminium – ein Konkurrent und Partner“
Härterei-Technische Mitteilungen 56, 191-199 (2001)
49. P. R. Besser, E. Zschech, W. Blum, D. Winter, R. Ortega, S. Rose, M. Herrick, M. Gall, S. Thrasher, M. Tiner, B. Baker, G. Braeckelmann, L. Zhao, C. Simpson, C. Cappasso, H. Kawasaki, E. Weitzmann
“Microstructural Characterization of Inlaid Copper Interconnect Lines”
J. Electronic Materials 30, 320-330 (2001)
50. E. Zschech, W. Blum, I. Zienert, P. R. Besser
„Effect of Copper Line Geometry and Process Parameters on Interconnect Microstructure and Degradation Processes“
Z. Metallkunde 92, 803-809 (2001)
51. E. Zschech, H. J. Engelmann, H. Saage, Q. de Robillard, H. Stegmann
„Characterization of Layer Stacks in Microelectronic Products: Challenges to Sample Preparation and TEM Analysis“
Pract. Met. 38, 442-453 (2001)
52. H. J. Engelmann, B. Volkmann, W. Blum, E. Zschech
„TEM Target Preparation in One Hour – Vision or Realistic Goal?“
Pract. Met. 39, 117-125 (2002)
53. M. Worch, H. J. Engelmann, W. Blum, E. Zschech
„Cross-sectional Thin Film Characterization of Si Compounds in Semiconductor Device Structures using Both Elemental and ELNES Mapping by EFTEM”
Thin Solid Films 405, 198-204 (2002)
54. M. Hecker, D. Fischer, V. Hoffmann, H. J. Engelmann, A. Voss, N. Mattern, C. Wenzel, C. Vogt, E. Zschech
“Influence of N Content on Microstructure and Thermal Stability of Ta-N Thin Films for Cu Interconnection”
Thin Solid Films 414, 184-191 (2002)
55. G. Schneider, G. Denbeaux, E. H. Anderson, B. Bates, A. Pearson, M. A. Meyer, E. Zschech, D. Hambach, E. A. Stach
“Dynamical X-Ray Microscopy Investigation of the Electromigration in Passivated Inlaid Cu Interconnect Structures”
Appl. Phys. Lett. 81, 2535-2537 (2002)
56. H. Stegmann, E. Zschech
„Electron Tomography of Semiconductor Copper Interconnect Structures“
Imaging Microscopy (4), 8-9 (2002)
57. J. Rinderknecht, H. Prinz, T. Kammler, F. Berberich, E. Zschech
„In-situ High Temperature Synchrotron-Radiation Diffraction Studies of Ni and Co-Ni Silicidation Processes“
Microel. Eng. 64, 143-149 (2002)
58. M. Hecker, R. Hübner, R. Ecke, S. Schulz, H. J. Engelmann, H. Stegmann, V. Hoffmann, N. Mattern, T. Gessner, E. Zschech
„Effect of Annealing on the Microstructure of Ultrathin Tungsten Nitride Diffusion Barriers for Copper Metallization“
Microel. Eng. 64, 269-277 (2002)
59. M. A. Meyer, M. Herrmann, E. Langer, E. Zschech
„In-Situ SEM Observation of Electromigration Phenomena in Fully Embedded Copper Interconnect Structures“
Microel. Eng. 64, 375-382 (2002)
60. E. Zschech, E. Langer, H. J. Engelmann
„Application of Scanning Electron Microscopy and Transmission Electron Microscopy in Semiconductor Industry“
Pract. Met. 39, 634-643 (2002)
61. G. Schneider, M. A. Meyer, G. Denbeaux, E. Anderseon, B. Bates, A. Pearson, C. Knöchel, D. Hambach, E. A. Stach, E. Zschech
“Electromigration in Passivated Cu Interconnects Studied by Transmission X-ray Microscopy”
J. Vac. Sci. Technol. B20, 3089-3094 (2002)
62. G. Schneider, G. Denbeaux, E. Anderson, A. Pearson, W. Bartes, S. Vogt, E. Zschech
„High Resolution X-ray Tomography with Applications in Biology and Materials Science“
J. Phys. IV 104, 607-613 (2003)
63. M. Kraatz, C. Heliot, W. Blum, E. Zschech
“Automated Grain Size Analysis in the Sub-Micron Range with AFM Image Processing“
Pract. Met. 40, 69-77 (2003)
64. H. J. Engelmann, B. Volkmann, E. Zschech
„From SEM Cross-Section to TEM Samples – New Capabilities of FIB Sample Preparation by “Refill” Technique”
Pract. Met. 40, 78-84 (2003)
65. H. J. Engelmann, B. Volkmann, E. Zschech, B. Grzemba
„Characterization of Precipitations and Dispersoids in Al Materials using TEM Samples Prepared by FIB“
Pract. Met. 40, 139-149 (2003)
66. G. Buytaert, B. Kernig, B. Grzemba, H. J. Engelmann, E. Zschech, H. Terryn
“The FIB/TEM Method for the Characterization of Rolled Al Surfaces”
ATB Metallurgie 43, 382-386 (2003)
67. H. Stegmann, H. J. Engelmann, E. Zschech
“Characterization of Barrier/Seed Layer Stacks of Cu Interconnects by Electron Tomographic Three-Dimensional Object Reconstruction”
Microel. Engin. 65, 171-183 (2003)
68. H. J. Engelmann, R. Hübner, M. Hecker, N. Mattern, C. Wenzel, E. Zschech
“Microstructure and Degradation Mechanisms of TaSiN Diffusion Barriers for Cu Interconnects”
Microscopy and Microanalysis 9, 248-249 (2003)
69. H. Stegmann, E. Zschech
“Electron Tomography of Inlaid Copper Interconnect Structures”
Microscopy and Microanalysis 9, 270-271 (2003)
70. E. Zschech, H. J. Engelmann, H. Stegmann, H. Saage, Q. de Robillard
„Barrier/seed Step Coverage Analysis of Via Structures for Inlaid Copper Process Control”
Future Fab International 14, 127-131 (2003)
71. E. Zschech, E. Langer, H. J. Engelmann, K. Dittmar
“Physical Failure Analysis in Semiconductor Industry – Challenges of the Copper Interconnect Process”
Mat. Sci. in Semicond. Processing 5, 457-464 (2003)
72. H. J. Engelmann, B. Volkmann, Y. Ritz, H. Saage, H. Stegmann, Q. de Robillard, E. Zschech
„TEM Sample Preparation using Focused Ion Beam – Capabilities and Limits“
Microscopy Today 11, 22-24 (2003)
73. R. Hübner, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, C. Wenger, H. J. Engelmann, C. Wenzel, E. Zschech, J. W. Bartha
„Structure and Thermal Stability of Graded Ta-TaN Diffusion Barriers between Cu and SiO2“
Thin Solid Films 437, 248-256 (2003)
74. J. Rinderknecht, H. Prinz, T. Kammler, N. Schell, E. Zschech, K. Wetzig, T. Gessner
„In situ High Temperature Synchrotron-Radiation Diffraction Studies of Silicidation Processes in Nanoscale Ni Layers“
Microel. Engin. 70, 226-232 (2003)
75. H. Stegmann, E. Zschech
„Compositional Analysis of Ultrathin Silicon Oxynitride Gate Dielectrics by Quantitative Electron Energy Loss Spectroscopy“
Appl. Phys. Lett. 83, 5017-5019 (2003)
76. U. Neuhäusler, G. Schneider, W. Ludwig, M. A. Meyer, E. Zschech, D. Hamsch
„X-ray Microscopy in Zernike Phase Contrast Mode at 4 keV Photon Energy with 60 nm Resolution“
J. Phys. D Appl. Phys. 36, A79 (2003)
77. Y. Ritz, H. Stegmann, H. J. Engelmann, E. Zschech
“Target Preparation of Samples for 3D-TEM using Micromanipulators“
Pract. Met. 41, 180-189 (2004)
78. R. Hübner, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, C. Wenger, H. J. Engelmann, C. Wenzel, E. Zschech
„Degradation mechanisms of Ta and Ta-Si Diffusion Barriers during Thermal Stressing”
Thin Solid Films 458, 237-245 (2004)
79. H. J. Engelmann, R. Huebner, M. Hecker, N. Mattern, C. Wenzel, E. Zschech
„Microstructural Evaluation of Degradation Mechanisms in Thermally Treated TaSiN Diffusion Barriers for Cu Interconnects“
Microscopy and Microanalysis 10, 616-617 (2004)
80. R. Hübner, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, H. J. Engelmann, E. Zschech
„Comparison of the Annealing Behavior of thin Ta Films Deposited onto Si and SiO2 Substrates
Anal. Bioanal. Chem. 379, 568–575 (2004)
81. R. Hübner, R. Reiche, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, H. Heuer, C. Wenzel, H. J. Engelmann, E. Zschech
„Void Formation in the Cu Layer during Thermal Treatment of SiNx/Cu/Ta73Si27/SiO2/Si Systems“
„Cryst. Res. Technol. 40, 135–142 (2004)
82. E. Zschech, M. A. Meyer, M. Grafe, G. Schneider
„Electromigration Degradation Mechanisms in Copper Dual-Inlaid Interconnects“
Materials Testing 46, 513-516 (2004)
83. A. V. Vairagar, S. G. Mhaisalkar, A. Kishnamoorthy, K. N. Tu, A. M. Gusak, M. A. Meyer, E. Zschech
„In situ Observation of Electromigration-Induced Void Migration in Dual-Damascene Cu Interconnect Structures“
Appl. Phys. Lett. 85, 2502–2504 (2004)
84. V. Sukharev, E. Zschech
„A Model for Electromigration Degradation Mechanisms in Dual-Inlaid Copper Interconnect Structures: Effect of Interface Bonding Strength“
J. Appl. Phys. 96, 6337-6343 (2004)
85. G. Schneider, M. A. Meyer, P. Guttmann, S. Rudolph, E. Zschech
„X-ray Microscopy: A Powerful Tool for Electromigration Studies in Modern ICs“
Future Fab International 19, 115–117 (2005)
86. E. Zschech, H. J. Engelmann, S. Ohsiek, B. Tracy, E. Adem, S. Robie, J. Bernard, D. Schmeisser
„Advanced MOSFET Gate Dielectrics for High-Performance Microprocessors: Materials Selection and Analytical Challenges“
in “Advances in Solid State Physics” (Ed. B. Kramer), Springer Berlin 45, 375 – 388 (2005)
87. M. Traving, I. Zienert, E. Zschech, G. Schindler, W. Steinhögl, M. Engelhardt
„Phase Analysis of TaN/Ta Barrier Layers in Sub-Micrometer Trench Structures for Cu Interconnects“
Applied Surface Science 252, 11 – 17 (2005)
88. A. V. Vairagar, S. Mhaisalkar, M. A. Meyer, E Zschech, A. Krishnamoorthy, K. N. Tu, A. M. Gusak
“Direct Evidence of Electromigration Failure Mechanism in Dual Damascene Copper Interconnect Tree Structure”
Appl. Phys. Lett. 87, 081909-1 – 081909-3 (2005)
89. E. Zschech, V. Sukharev
“Microstructure Effect on EM-induced Copper Interconnect Degradation: Experiment and Simulation”
Microelectronic Engineering 82, 629- 638 (2005)
90. A. V. Vairagar, S. G. Mhaisalkar, M. A. Meyer, E. Zschech, A. Krishnamoorthy
“Reservoir Effect on Electromigration Mechanisms in Dual-Damascene Cu Interconnect Structures”
Microelectronic Engineering 82, 675-679 (2005)
91. L. Jiang, H. Geisler, E. Zschech
„Quantitative Mapping of Elastic Properties of Electron-Beam Damaged Silica-Based Low-k Films“
Mat. Sci. Poland 23, 643-651 (2005)
92. E. Zschech, H. J. Engelmann, M. A. Meyer, V. Kahlert, A. V. Vairagar, S. G. Mhaisalkar, A. Krishnamoorthy, M. Yan, K. N. Tu, V. Sukharev
„Effect of Interface Strength on Electromigration-Induced Inlaid Copper Interconnect Degradation: Experiment and Simulation”
Z. f. Metallkde. 96, 966-971 (2005)
93. R. Hübner, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, H. Heuer, C. Wenzel, H. J. Engelmann, D. Gehre, E. Zschech
„Effect of Nitrogen Content on the Degradation Mechanism of Thin Ta-Si-N Diffusion Barriers for Cu Metallization“
Thin Solid Films 500, 259-267 (2006)
94. E. Zschech, M. A. Meyer, S. G. Mhaisalkar, A. V. Vairagar, A. Krishnamoorthy, H. J. Engelmann, V. Sukharev
“Effect of Interface Modification on EM-Induced Degradation Mechanisms in Copper Interconnects”
Thin Solid Films 504, 279-283 (2006)
95. E. Zschech, U. Mantz, P. Kuecher
„The FABLAB Concept: Future Challenges to Analytics and Metrology in the Semiconductor Industry“
Future Fab International 20, 133–136 (2006)
96. L. Jiang, H. Geisler, E. Zschech
„Quantitative Mapping of Elastic Properties of Plasma-Treated Silica-Based Low-k Films”
Thin Solid Films 515, 2230–2234 (2006)
97. D. Schmeisser, E. Zschech
„Silicate Formation at the Interface of Hf Oxide as a High-k Dielectrics and Si(001) Surfaces”
Mat. Sci. in Semiconductor Processing 9, 934-939 (2006)
98. A. V. Vairagar, Z. Gan, W. Shao, S. G. Mhaisalkar, H. Li, K. N. Tu, Z. Chen, E. Zschech, H. J. Engelmann, S. Zhang
“Inprovement of the Electromigration Lifetime of Submicrometer Dual-Damascene Cu Interconnects Through Surface Engineering”
J. Electrochem. Soc. 153(9), G840-G845 (2006)
99. P. Potapov, H. J. Engelmann, E. Zschech
“Measurement of k-Value in Semiconductor Structures”
Microscopy and Microanalysis 12, 1136-1137 (2006)
100. T. E. M. Staab, R. Krause-Rehberg, U. Hornauer, E. Zschech
“Study of Artificial Aging in AlMgSi (6061) and AlMgSiCu (6013) Alloys by Positron Annihilation”
J. Mat. Sci. 41, 1059-1066 (2006)
101. L. Zhu, J. Atesang, P. Dudek, M. Hecker, J. Rinderknecht, Y. Ritz, H. Geisler, U. Herr, R. Geer, E. Zschech
„Experimental Challenges for Approaching Local Strain Determination in Silicon by Nano-Raman Spectroscopy“
Mat. Sci. Poland 25, 19-31 (2007)
102. E. Zschech, A. Diebold
„Breakthrough of X-ray Techniques in Analytics and Metrology“
Future Fab International 22, 105-112 (2007)
103. W. Shao, S. G. Mhaisalkar, T. Sritharan, A. V. Vairagar, H. J. Engelmann, O. Aubel, E. Zschech, A. M. Gusak, K. N. Tu
„Direct Evidence of Cu/Cap/Liner Edge Being the Dominant Electromigration Path in Dual Damascene Cu Interconnect”
Appl. Phys. Lett. 90, 052106-1 – 052106-3 (2007)
104. M. Damayanti, T. Sritharan, S. G. Mhalsakar, H. J. Engelmann, E. Zschech, A. V. Vairagar, L. Chan
“Microstructure Evolution of Annealed Ruthenium-Nitrogen Films”
Electrochemical and Solid-State Letters 10, P15–P17 (2007)
105. C. Georgi, M. Hecker, E. Zschech
„Raman Intensity Enhancement in Silicon-on-Insulator Substrates by Laser Deflection at Atomic Force Microscopy Tips and Particles“
Appl. Phys. Lett. 90, 171102-1 – 171102-3 (2007)
106. L. Zhu, C. Georgi, M. Hecker, J. Rinderknecht, A. Mai, Y. Ritz, E. Zschech
“Nano-Raman Spectroscopy with Metallized Atomic Force Microscopy Tips on Strained Silicon Substrates”
J. Appl. Phys. 101, 104305-1 – 104305-6 (2007)
107. V. Sukharev, E. Zschech, W. D. Nix
„A Model for Electromigration-Induced Mechanisms in Dual-Inlaid Copper Interconnects: Effect of Microstructure“
J. Appl. Phys. 102, 053505-1 – 053505-14 (2007)
108. Y. Ritz, A. Masalska, M. Hecker, T. Gotszalk, E. Zschech
„Modification and Characterization of Metallized Tips for Scanning Probe Microscopy”
Pract. Metallogr. 44, 451-463 (2007)
109. P. Potapov, H. J. Engelmann, E. Zschech, M. Stöger-Pollach
„Determination of Dielectric Permittivity from EELSpectra in Semiconductor Structures“
Microscopy and Microanalysis 13, 1252-1253 (2007)
110. A. Mai, L. Zhu, M. Hecker, J. Rinderknecht, C. Georgi, Y. Ritz, E. Zschech
„Aperture Based Raman Spectroscopy on SiGe Film Structures with Near-Field Resolution”
J. Raman Spectr. 39, 435-438 (2008)
111. E. Zschech, H. Geisler, G. Schneider, R. Spolenak, D. Schmeisser
„Nanoscale Analysis Using Synchrotron-Radiation: Applications in Semiconductor Industry“
Current Nanoscience 4, 256-266 (2008)
112. M. Hasiak, M. Miglierini, J. Kaleta, J. Zbroszczyk, E. Zschech
„Microstructure Investigations and Magnetic After-Effect in Amorphous and Nanocrystalline Fe-Zr-Ti-B-Cu Alloy”
J. Magn. Magn. Mat. E783–E786 (2008)
113. K. Zagorodniy, D. Chumakov, C. Taeschner, A. Lukowiak, H. Stegmann, D. Schmeisser, H. Geisler, H. J. Engelmann, H. Hermann, E. Zschech
“Novel Carbon-Cage Based Ultralow-k Materials: Modeling and First Experiments”
IEEE Transaction on Semiconductor Manufacturing 21, 646-660 (2008)
114. T. S. Kim, N. Tsuji, N. Kemeling, K. Matsushita, D. Chumakov, H. Geisler, E. Zschech, R. Dauskardt
“Depth Dependence of UV Curing of Organosilicate Low-k Thin Films”
J. Appl. Phys. 103, 064108 (2008)
115. E. Zschech, W. Yun, G. Schneider
„High-Resolution X-Ray Imaging – A Powerful Technique for Applications in Semiconductor Industry“
Appl. Phys. A 92, 423–429 (2008)
116. H. Geisler, D. Chumakov, E. Zschech
“Nanomechanical Probing Techniques”
NanoS 01.08, 27–33 (2008)
117. K. Zagorodniy, H. Hermann, M. Taut, G. Seifert, E. Zschech
„Structure Analysis and Property Improvements of the Computer-Simulated Fullerene-Based ultralow-k Dielectrics”
Microelectronic Engineering 85, 2118–2122 (2008)
118. K. Zagorodniy, D. Chumakov, C. Taschner, A. Likowiak, H. Stegmann, D. Schmeisser, H. Geisler, H. J. Engelmann, H. Hermann, E. Zschech
„Novel Carbon-Cage-Based Ultralow-k Materials: Modeling and First Experiments“
IEEE Transactions on Semiconductor Manufacturing 21, 646-660 (2008)
119. D. Xu, V. Sriram, V. Ozolins, J. M. Yang, K.N. Tu, G. R. Stafford, C. Beauchamp, I. Zienert, H. Geisler, P. Hofmann, E. Zschech
“Nanotwin formation and its physical properties and effect on reliability of copper interconnects”
Microelectronic Engineering 85, 2155–2158 (2008)
120. H. Stegmann, V. B. Özdöl, C. Koch, P. A. van Aken, H. J. Engelmann, P. Potapov, E. Zschech
“Chemical Bonds in Damaged and Pristine low-k Materials: A Comparative EELS Study”
Microelectronic Engineering 85, 2169–2171 (2008)
121. T. S. Kim, N. Tsuji, K. Matsushita, N. Koboyashi, D. Chumakov, H. Geisler, E. Zschech, R. Dauskardt
“Tuning Depth Profiles of Organosilicate Films with Ultraviolet Curing”
J. Appl. Phys. 104, 074113 (2008)
122. E. Zschech, P. S. Ho, D. Schmeisser, M. A. Meyer, A. V. Vairagar, G. Schneider, M. Hauschildt, M. Kraatz, V. Sukharev
„Geometry and Microstructure Effects on Electromigration-Induced Copper Interconnect Degradation”
IEEE Transactions on Devices and Materials Reliability 9, 20–30 (2009)
123. V. Sukharev, A. Kteyan, E. Zschech, W. D. Nix
“Microstructure Effect on EM-induced Degradation in Dual-Inlaid Copper Interconnects”
IEEE Transactions on Devices and Materials Reliability 9, 87-97 (2009)
124. P. L. Potapov, H. J. Engelmann, E. Zschech, M. Stöger-Pollach
„Measuring the Dielectric Constant from Valence EELS“
Micron 40, 262-268 (2009)
125. J. H. Kim, V. A. Ignatova, P. Kücher, M. Weisheit, E. Zschech
„Post Annealing Effect on Ultra-Thin Hf-Based High-k Gate Oxides on Si“
Current Applied Physics 9, 104–107 (2009)
126. D. Schmeisser, M. Tallarida, K. Henkel, K. Müller, D. Mandal, D. Chumakov, E. Zschech
„Characterization of Oxidic and Organic Materials with Synchrotron Radiation Based XPS and XAS”
Materials Science Poland 27, 141–157 (2009)
127. K. Karavaev, K. Kolanek, M. Tallarida, D. Schmeisser, E. Zschech
“In-Situ Studies of ALD Growth of Hafnium Oxide Films”
Advanced Engineering Materials 11, 265–268 (2009)
128. G. Wielgoszewski, T. Gotszalk, M. Woszczyna, P. Zawierucha, E. Zschech
„Conductive Atomic Force Microscope for Investigation of Thin-Film Gate Insulators”
Bull. Polish Acad. Sci. 56, 39–44 (2009)
129. Z. Chong, M. Weisheit, M. Hecker, E. Zschech
„A Fully Stress-Parametrized Model for the Dielectric Function of Silicon-on-Insulator Layers”
Semicond. Sci. Technol. 24, 045013 (2009)
130. T. S. Kim, D. Chumakov, E. Zschech, R. H. Dauskardt
“Tailoring UV Curing Depth Profiles for Optimal Mechanical Properties of Organosilicate Thin Films”
Appl. Phys. Lett. 95, 071902 (2009)
131. E. Zschech, R. Huebner, D. Chumakov, O. Aubel, D. Friedrich, P. Guttmann, S. Heim, G. Schneider
„Stress-Induced Phenomena in Nano-Sized Copper Interconnect Structures
studied by X-Ray and Electron Microscopy”
J. Appl. Phys. 106, 093711 (2009)
132. D. Chumakov, F. Lindert, M. U. Lehr, M. Grillberger, E. Zschech
„Fracture Toughness Assessment of Patterned Cu Interconnect Stacks by Dual Cantilever Beam (DCB) Technique”
IEEE TSM 22, 592–595 (2009)
133. E. Zschech
“Materials for Information Technology”
Int. J. Mat. Res. 101, 149-154 (2010)
134. P. S. Ho, E. Zschech, D. Schmeisser, M. A. Meyer, R. Huebner, M. Hauschildt, Z. Lijuan, M. Gall, M. Kraatz
“Scaling Effects on Microstructure and Reliability for Cu Interconnects”
Int. J. Mat. Res. 101, 216–227 (2010)
135. G. Wielgoszewski, P. Sulecki, T. Gotszalk, P. Janus, D. Szmigiel, P. Grabiec, E. Zschech
“Microfabricated Resistive High-Sensitivity Nanoprobe for Scanning Thermal Microscopy”
J. Vac. Sci. Technol. B28, C6N7 (2010)
136. K. Kolanek, P. Hermann, P. Dudek, T. Gotszalk, D. Chumakov, M. Weisheit, M. Hecker, E. Zschech
“Local Anodic Oxidation by Atomic Force Microscopy for nano-Raman Strain Measurements on Silicon-Germanium Thin Films”
Thin Solid Films 518, 3267–3272 (2010)
137. R. Huebner, H. Engelmann, E. Zschech
„Challenges to Quantitative Energy-Dispersive X-Ray Spectrometry and ist Application to Graded Embedded Silicon-Germanium for High-Performance Complementary Metal Oxide Semiconductor Devices“
Thin Solid Films 519, 203–209 (2010)
138. P. Janus, D. Szmigiel, M. Weisheit, G. Wielgoszewski, Y. Ritz, P. Grabiec, M. Hecker, T. Gotszalk, P. Sulecki, E. Zschech
“Novel SThM Nanoprobe for Thermal Properties Investigation of Micro- and Nanoelectronic Devices”
Microelectronic Engineering 87, 1370–1374 (2010)
139. G. Wiegoszewski, P. Sulecki, T. Gotszalk, P. Janus, D. Szmigiel, P. Grabiec, E. Zschech
“Microfabricated Resistive High-Sensitivity Nanoprobe for Scanning Thermal Microscopy”
J. Vac. Sci. Technol. B 28, C6N7-C6N11 (2010)
140. P. Dudek, G. Lupina, G. Kozlowski, J. Bauer, O. Fursenko, J. Dabrowski, R. Schmidt, G. Lippert, H. J. Muessig, T. Schroeder, D. Schmeisser, E. Zschech
“Atomic-Scale Engineering of Future High-k Dynamic Random Access Memory Dielectrics: The Example of Partial Hf Substitution by Ti in BaHfO3”
J. Vac. Sci. Technol. B29, 01AC03 (2011)
141. E. Zschech, C. Wyon, C. E. Murray, G. Schneider
“Devices, Materials and Processes for Nanoelectronics: Characterization with Advanced X-ray Techniques using Lab-based and Synchrotron Radiation Sources”
Adv. Eng. Mater. 13(8), 811-836 (2011)
142. H. Stegmann, H. Dömer, R. Rosenkranz, E. Zschech
„Efficient Target Preparation by Combined Pulsed Laser Ablation and FIB Milling“
Microscopy and Microanalysis 17, 658–659 (2011)
143. R. Hübner, H. J. Engelmann, E. Zschech
„Characterization of Small Cu Grains using the Conical Dark-Field Technique in the Transmission Electron Microscope“
Microscopy and Engineering 17, 1100–1101 (2011)
144. L. W. Kong, J. R. Lloyd, K. B. Yeap, E. Zschech, A. Rudack, M. Liehr, A. Diebold
“Applying X-ray Microscopy and Finite Element Modelling to Identify the Mechanism of Stress-Assisted Void Growth in Through Silicon Vias”
J. Appl. Phys. 110, 053502 (2011)
145. G. Wielgoszewski, P. Sulecki, T. Gotszalk, P. Janus, P. Grabiec, M. Hecker, Y. Ritz, E. Zschech
“Scanning Thermal Microscopy: A Nanoprobe Technique for Studying the Thermal, Properties of Nanocomponents”
Phys. Status Solidi B 248 (2), 370-374 (2011)
146. G. Wielgoszewski, P. Sulecki, P. Janus, P. Grabiec, E. Zschech, T. Gotszalk
“A High-resolution Measurement System for Novel Scanning Thermal Microscopy Resistive Nanoprobes”
Measurement Science and Technology 22, 094023 (2011)
147. L. Zhang, P. S. Ho, O. Aubel, C. Hennesthal, E. Zschech
„Grain Structure Effect on Electromigration Reliability of Cu Interconnects with CoWP Capping“
J. Mat. Res. 26, 2757-2760 (2011)
148. L. W. Kong, A. C. Rudack, P. Krueger, E. Zschech, S. Arkalgur, A. C. Diebold
“3D Interconnect Visualization of Extrusion and Voids Induced in Copper-Filled Through Silicon Vias (TSVs) at various Temperatures using X-ray Microscopy”
Microelectronic Engineering 92, 24–28 (2012)
149. J. Klocek, K. Henkel, K. Kolanek, K. Broczkowska, D. Schmeisser, M. Miller, E. Zschech
“Studies of the Chemical and Electrical Properties of Fullerene and 3-aminopropyltrimethoxysilane Based Low-k Materials”
Thin Solid Films 520, 2498–2504 (2012)
150. J. Klocek, K. Henkel, K. Kolanek, E. Zschech, D. Schmeisser
“Annealing Influence on Siloxane Based Materials Incorporated with Fullerenes, Phthalocyanines and Silsesquioxanes”
BioNanoScience 2, 52-58 (2012)
151. J. Klocek, K. Henkel, K. Kolanek, E. Zschech, D. Schmeisser
“Spectroscopic and Capacitance-Voltage Characterization of Thin Aminopropymethoxylsilane Films Doped with Copper Phthalocyanine, Tri(dimethyvinylsiloxy)-POSS and Fullerene Cages”
Appl. Surface Science 258, 4213–4221 (2012)
152. K.-B. Yeap, M. Roellig, R. Huebner, M. Gall, V. Sukharev, E. Zschech
“A Critical Review on Multiscale Material Database Requirement for Accurate Three-Dimensional IC Simulation Input”
IEEE Transaction of Device, Materials and Reliability 12, 217-224 (2012)
153. A. P. Karmarkar, X. Xu, K. B. Yeap, and E. Zschech
“Copper Anisotropy Effects in Three-Dimensional Integrated Circuits Using Through-Silicon Vias”
IEEE Transaction of Device, Materials and Reliability 12, 225-232 (2012)
154. V. Sukharev, A. Kteyan, and E. Zschech
“Physics-Based Models for EM and SM Simulation in Three-Dimensional IC Structures”
IEEE Transaction of Device, Materials and Reliability 12, 272 – 284 (2012)
155. V. Sukharev, A. Kteyan, J. H. Choy, H. Hovsepyan, A. Markosian, E. Zschech, R. Huebner
”Multi-scale Simulation Methodology for Stress Assessment in 3D IC: Effect of Die Stacking on Device Performance”
J. Electronic Testing 1, 63–72 (2012)
156. K. B. Yeap, M. Kopycinska-Müller, U. D. Hangen, C. Zambaldi, R. Hübner, S. Niese, E. Zschech
“Nanometer Deformation of Elastically Anisotropic Materials Studied by Nanoindentation”
Phil. Mag. 92, 3142-3157 (2012)
157. K. B. Yeap, E. Zschech, U. D. Hangen, T. Wyborek, L. W. Kong, A. Kamakar, X. Xu, I. Panchenko
„Elastic Anisotropy of Cu and its Impact on Stress Management for 3D IC: Nanoindentation and TCAD Simulation Study“
J. Mat. Res. 27, 339-348 (2012)
158. A. P. Kamakar, X. Xu, K. B. Yeap, E. Zschech
„Copper Anisotropy Effects in Three-Dimensional Integrated Circuits Using Through-Silicon Vias”
IEEE Transactions on Devices and Materials Reliability 12, 272-284 (2012)
159. J. Klocek, K. Kolanek, K. Henkel, E. Zschech, D. Schmeisser
“Influence of the Fullerene Derivatives and Cage Polyhedral Oligomeric Silsesqiuoxanes on 3-aminopropyltrimethoxysilane-based Hybrid Nanocomposites Chemical, Morphological and Electrical Properties”
Journal of Physics and Chemistry of Solids 74, 135–145 (2013)
160. K. B. Yeap, M. Kopycinska-Müller, L. Chen, Y. Chen, M. Jungmann, R. Krause-Rehberg, S. Mahajan, J. Vlassak, M. Gall, E. Zschech
„The Effect of the Pore Topology on the Elastic Modulus of Organosilicate Glass“
J. Mat. Res. 28 (9), 1262-1268 (2013)
161. K. B. Yeap, F. Iacopi, H. Geisler, U. Hangen, E. Zschech
„Nanoindentation for Reliability Assessment of ULK Films and Interconnect Structures“
Microelectronic Engineering 106, 182-187 (2013)
162. M. Kopycinska-Müller, K. B. Yeap, S. Mahajan, B. Köhler, N. Kuzeyeva, T. Müller, E. Zschech, K. J. Wolter
„Mechanical Characterization of Nanoporous Materials by Use of Atomic Force Acoustic Microscopy Methods“
Nanotechnology 24, 355703 (2013)
163. J. Gluch, S. Niese, C. Jung, L. Röntzsch, E. Zschech, B. Kieback
„Electron and X-ray Tomography of Iron/Iron Oxide Redox Reactions for Large-Scale Hydrogen Storage“
Microscopy and Microanalysis 19, 578-579 (2013)
164. K. B. Yeap, M. Gall, Z. Liao, C. Sander, U. Muehle, K. Y. Yiang, P. Justison, O. Aubel, M. Hauschildt, A. Beyer, N. Vogel, E. Zschech
„In-situ Study on Low-k Interconnect Time-Dependent-Dielectric-Breakdown Mechanisms”
J. Appl. Phys. 115, 124101-1-7 (2014)
165. S. Niese, P. Krüger, A. Kubec, R. Lass, P. Gawlitza, K. Melzer, S. Braun, E. Zschech
„Fabrication of Customizable Wedged Multilayer Laue Lenses by Adding a Stress Layer“
Thin Solid Films, http://dx.doi.org/10.1016/j.tsf.2014.02.095 (2014)
166. Z. Liao, M. Gall, K. B. Yeap, C. Sander, O. Aubel, U. Mühle, J. Gluch, S. Niese, Y. Standke, R. Rosenkranz, M. Löffler, N. Vogel, A. Beyer, H. J. Engelmann, P. Guttmann, G. Schneider, E. Zschech
„A New In-situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time-Dependent Dielectric Breakdown: Set-Up and Opportunities“
Adv. Eng. Mater. 16, 486-493 (2014)
167. M. Hauschildt, B. Hintze, M. Gall, F. Koschinsky, A. Preusse, T. Bolom, M. Nopper, A. Beyer, O. Aubel, G. Taut, E. Zschech
„Advanced Metallization Concepts and Impact on Reliability“
Jap. J. Appl. Phys. 53, 05GA11 (2014)
168. C. Sander, M. Gall, K. B. Yeap, E. Zschech
“Advanced 3D Packaging of Chips and Materials Integrity: Stress-Induced Effects and Mechanical Properties of New Ultra Low-k Dielectrics for On-Chip Interconnect Stacks”
Key Engineering Materials 592, 563-568 (2014)
169. S. Niese, P. Krueger, A. Kubec, S. Braun, J. Patommel, C. Schroer, A. Leson, E. Zschech
“Full-field X-ray Microscopy with Crossed Partial Multilayer Laue Lenses”
Optics Express 22, 20008-20013 (2014),
http://dx.doi.org/10.1364/OE.22.020008
168. M. Loeffler, S. Banerjee, J. Trommer, A. Heinzig, W. Weber, E. Zschech
„In-Situ Investigations of Individual Nanowires within a FIB/SEM System”
Microscopy and Microanalysis 20, 360-361(2014)
169. C. Sander, Y. Standke, S. Niese, R. Rosenkranz, A. Clausner, M. Gall, E. Zschech
„Advanced Methods for Mechanical and Structural Characterization of Nanoscale Materials for 3D IC integration”
Microelectronics Reliability DOI: 10.1016/j.microrel.2014.07.124 (2014)
170. J. Gluch, S. Niese, L. Roentzsch, E. Zschech
„X-ray Microscopy and Tomography of Hydrogen Storage Materials”
Microscopy and Microanalysis 20, 1568-1569 (2014)
171. Z. Liao, M. Gall, K. B. Yeap, C. Sander, U. Muehle, J. Gluch, Y. Standke, O. Aubel, N. Vogel, M. Hauschildt, A. Beyer, H. J. Engelmann, E. Zschech
„In-situ Study of the TDDB-Induced Damage Mechanism in Cu/Ultra-low-k Interconnect Structures”
Microelectronic Engineering 137, 47 – 53, DOI: 10.1016/j.mee.2014.09.014 (2014)
172. Z. Liao, M. Gall, K. B. Yeap, C. Sander, A. Clausner, U. Muehle, J. Gluch, Y. Standke, O. Aubel, A. Beyer, M. Hauschildt, E. Zschech
„In-situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices”
10. Vis. Exp. (100), e52447, DOI: 10.3791/52447 (2015)
173. Z. Liao, T. Zhang, M. Gall, A. Dianat, R. Rosenkranz, R. Jordan, G. Cuniberti, E. Zschech
„Lateral Damage in Graphene Carved by High Energy Focused Gallium Ion Beams”
Applied Physics Letters 107, 013108, DOI: 10.1063/1.4926647 (2015)
174. S. Banerjee, M. Loeffler, U. Muehle, K. Berent, W. Weber, E. Zschech
„TEM Study of Schottky Junctions in Reconfigurable Silicon Nanowire Devices”
Advanced Engineering Materials 18, 180 – 184, DOI: 10.1002/adem.201400577 (2015)
175. A. Garitagoitia Cid, R. Rosenkranz, E. Zschech
“Optimization of the SEM Working Conditions: EsB Detector at Low Voltage”
Advanced Engineering Materials 18, 185 – 193, DOI: 10.1002/adem.201500161 (2015)
176. S. Banerjee, U. Muehle, M. Loeffler, A. Heinzig, J. Trommer, E. Zschech
„Preparation and Characterization of Silicon Nanowires using SEM/FIB and TEM”
Int. J. Mat. Res. 106, 697 – 702 (2015), DOI: 10.3139/146.111249 (2015)
177. J. Huang, M. Loeffler, U. Muehle, W. Moeller, H. Mulders, L. Kwakman, E. Zschech
„A Study of Gallium FIB Induced Silicon Amorphization using TEM, APT and BCA Simulation“
Microscopy and Microanalysis 21, 1839 – 1840 (2015)
178. M. Kopycinska-Mueller, A. Clausner, K. B. Yeap, B. Koehler, N. Kuzeyeva, S. Mahajan, T. Savage, E. Zschech, K. J. Wolter
“Mechanical Characterization of Porous Nano-thin Films by use of Atomic Force Acoustic Microscopy”
Ultramicroscopy 162, 82 – 90 (2016)
179. A. Garitagoitia Cid, M. Sedighi, M. Loeffler, W. F. van Dorp, E. Zschech
“Energy-Filtered Backscattered Imaging Using Low-Voltage Scanning Electron Microscopy: Characterizing Blends of ZnPc–C60 for Organic Solar Cells”
Advanced Engineering Materials 18 (6) (2016)
DOI: 10.1002/adem.201600063
180. M. Kraatz, M. Gall, E. Zschech, D. Schmeisser, P. S. Ho
“A Model for Statistical Electromigration Simulation with Dependence on Capping Layer and Cu Microstructure in Two Dimensions”
Computational Materials Science 120, 29 – 35 (2016)
181. Q. Li, J. Gluch, P. Krueger, M. Gall, C. Neinhuis, E. Zschech
„Pollen Structure Visualization using High-resolution Laboratory-based Hard X-ray Tomography”
Biochemical and Biophysical Res. Comm. 479, 272 – 276 (2016)
182. J. Huang, M. Loeffler, W. Moeller, E. Zschech
„Ga Contamination in Silicon by Focused Ion Beam Milling: Dynamic Model Simulation and Atom Probe Tomography Experiment”
Microelectronics Reliability 64, 390 – 392 (2016)
183. E. Zschech, J. Gluch, R. Rosenkranz, Y. Standke, S. Niese
„FIB Sample Preparation for X-ray Microscopy and ROI Target Cross-sectioning“
Microscopy and Microanalysis 22, 168 – 169 (2016),
DOI: 10.1017/S1431927616001690
184. Z. Liao, M. Gall, K. B. Yeap. C. Sander, A. Clausner, U. Muehle, J. Gluch, Y. Standke, R. Rosenkranz, O. Aubel, M. Hauschildt, E. Zschech
„TEM Investigation of Time-Dependent Dielectric Breakdown Mechanisms in Cu/Low-k Interconnects“
IEEE Transactions on Device and Materials Reliability 16(4) (2016)
DOI: 10.1109/TDMR.2016.2539500
185. A. Garitagoitia Cid, E. Moayedi, R. Rosenkranz, A. Clausner, K. Pakbaz, E. Zschech
„Non-Destructive Imaging of Organosilicate Glass (OSG) Thin Films at Low Voltage with the EsB Detector“
IEEE Transactions on Device and Materials Reliability 16(4) (2016)
DOI: 10.1109/TDMR.2016.2628166
186. Z. Liao, L. M. Sandonas, T. Zhang, M. Gall, A. Dianat, R. Gutierrez, U. Muehle, J. Gluch, R. Jordan, G. Cuniberti, E. Zschech
„In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope“
Scientific Reports 7(1) (2016), DOI: 10.1038/s41598-017-00227-3
187. P. Czaja, J. Przewoznik, L. Gondek, L. Hawelek, A. Zywczak, E. Zschech
“Low Temperature Stability of 4O Martensite in Ni49.1Mn38.9Sn12 Metamagnetic Heusler Alloy Ribbons”
Journal of Magnetism and Magnetic Materials 421, 19 – 24 (2017)
DOI: 10.1016/j.jmmm.2016.07.065
188. J. Trommer, A. Heinzig, U. Muehle, M. Loeffler, A. Winzer, P. M. Jordan, J. Beister, T. Baldauf, M. Geidel, B. Adolphi, E. Zschech, T. Mikolajick, W. M. Weber
„Enabling Energy Efficiency and Polarity-Control in Germanium Nanowire Transistors by Individually Gated Nano-Junctions“
ACS Nano 11(2) (2017)
DOI: 10.1021/acsnano.6b07531
189. V. Sukharev, J. H. Choy, A. Kteyan, H. Hovsepyan, M. Nakamoto, W. Zhao, R. Radojcic, U. Muehle, E. Zschech
„Carrier Mobility Shift in Advanced Silicon Nodes Due to Chip Package Interaction“
Journal of Electronic Packaging · April 2017
DOI: 10.1115/1.4036402
190. A. Dianat, Z. Liao, M. Gall, T. Zhang, R. Gutierrez, E. Zschech, G. Cuniberti
„Doping of Graphene Induced by Boron/Silicon Substrate“
Nanotechnology 28(21) (April 2017)
DOI: 10.1088/1361-6528/aa6ce9
191. J. Zhang, T. Wang, P. Liu, Z. Liao, S. Liu, X. Zhuang, M. Chen, E. Zschech, X. Feng
„Efficient Hydrogen Production on MoNi4 Electrocatalysts with Fast Water Dissociation Kinetics“
Nature Comm 8, 15437 (2017)
DOI: 10.1038/ncomms15437
Popular Scientific Books
1. K. Easterling, E. Zschech
“Werkstoffe im Trend”
(150 S.)
Verlag Technik, Berlin (1997)
2. E. Zschech
„Münzen – von der Antike bis zum Euro“ (Geschichte, Werkstoffe, Technologien)
(96 S.)
Verlag Wissen 21, Moritzburg (2001)
Popular Scientific Papers
1. W. Blau, E. Zschech
“Synchrotronstrahlung – ein Werkzeug der Hochtechnologie”
Wissenschaft und Fortschritt 40, 327-330 (1990)
2. E. Zschech, W. Blau
“Röntgenabsorptionsspektroskopie zur Strukturanalyse in Werkstoffwissenschaft, Chemie und Molekularbiologie”
Wissenschaft und Fortschritt 41, 67-70 (1991)
3. E. Zschech, H. H. Portisch
„Die Euro-Münzen – Ergebnis von menschlicher Kreativität und technischer Innovation“
Metall 55, 718-722 (2001)
4. E. Zschech, H. Knieriemen
„Die Prägung der Euro-Münzen – Ergebnis technischer Innovation“
Münzen und Papiergeld Heft 02/2002, 21-24 (2002)
5. M. A. Meyer, E. Zschech, P. Guttmann, G. Schneider
„Exploring the World of Microprocessors“
BESSY Highlights, 30 – 31 (2003)
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see also researchgate.net